Ir Absorption Spectrum Studies Of VnOm In Electron-Irradiated Cz-Si

The interstitial (I) and vacancy (V) were generated in electron irradiation silicon.They interact of other defects and silicon atoms can produce VO, VO₂ and othervacancy-oxygen defects. It is the most important issue for the effect of electronirradiation and the control of defects in silicon. In this paper, the conversion of theVnOm in silicon and the position of the IR peak in lower measurement temperaturewere investigated with Fourier Transform Infrared Absorption Spectrometer (FTIR).IR characteristics of irradiation defects and the interaction with oxygen in silicon werediscussed and the concentration of VO completes was calculated.Experimental results showed that the intensity of VO is related to the annealingtemperature. The intensity of VO at the maximum when the annealing at 300℃anddisappeared at about 450℃. Upon annealing 300℃VO defects become mobileleading to the decay of 830cm^-1 and the parallel growth of 889cm^-1 (VO₂). But thediffusion coefficient of VO is much higher than that of Oi , and also that the captureradius for the reaction between VO's is expected to be larger than that between VOand Oi . Thus the reactionVO+VOâ†'V₂O₂â†'VO₂+V is expected to be preferable tothe reaction 2 VO O VO i +â†'.The concentration of VO was proportional to (dose )m not related to theconcentration of initial oxygen in this case. The concentration of vacancy that inducedby irradiation is a constant, leading to the concentration of VO is a constant at thesame radiation dose. VO and VO₂ absorption peak shifted to higher frequency inlower measurement temperature and the intensity increase with the decreases ofmeasurement temperature.