Font Size: a A A

Investigation Of The Irradiation Defects In Fast Neutron Irradiated Czochralski Silicon

Posted on:2008-11-28Degree:MasterType:Thesis
Country:ChinaCandidate:X H LiFull Text:PDF
GTID:2178360215994897Subject:Materials Physics and Chemistry
Abstract/Summary:PDF Full Text Request
Translation mechanism of fast neutron irradiation defects and the effects of fast neutron irradiation defects on oxidation induced defects in Czochralski silicon (CZ-Si) in annealing process was investigated systemically.The experiment results indicated that the change trend of the concentration of interstitial oxygen ([Oi]) in fast neutron irradiation CZ-Si fluctuated largely with temperature increasing after annealing from 100℃to 700℃, especially between 500℃and 700℃. There are large quantity of metastable defects in fast neutron irradiation CZ-Si. During heat-treatment process at different temperature, the conversion of the metastable defects make [Oi] fluctuate largelyOxygen introduced defects is connected with pre-annealing temperature after two-step annealing in fast neutron irradiation CZ-Si. Pre-annealing at 500℃, the formation of irradiation defects V2O2, O-V-O is the main reason of the formation of dislocation loops and faults after two-step annealing in samples. Pre-annealing at 600℃, the appearance of three-dimensional vacancy clusters causes the precipitation of oxygen and after two-step annealing these area can form large faults and dislocation loop. When nnealing temperature runs up to 700℃, irradiation defects decompose and the main defects in sample is dislocation after two-step annealing. It can be concluded that oxygen introduced defects after two-step annealing is determined by defects that formed during pre-annealing at different temperature.The magic denuded zone(MDZ) of fast neutron irradiation CZ-Si is investigated. It was found that the behavior of the irradiated samples was different from the non-irradia- tion samples for the vacancy type defects induced by fast neutron irradiation. The results show that with increasing of the dosage MDZ have a tend of increasing earlier and decreasing later. When dosage is 5.9×1018 n·cm-2 the width of the MDZ is about 35μm; When dosage is 1.17×1019 n·cm-2, there is no denuded zone (DZ) but lots of microdefects (BMDs) on bulk.
Keywords/Search Tags:Fast Nneutron Irradiation, Czochralski Silicon, Irradiated Defects, Oxygen Precipitation
PDF Full Text Request
Related items