The Fitting Of New-Type Devices And Designe Of Corresponding Integartes Circuits

While with the advantages of large band gap and strong compression resistance, the new 3rd generation semiconductor, such as SiC, GaN and AlN, are highly expected to breakthrough the limit and realize the performance that regular semiconductors can not reach.With wide applications, transistors have become one of the most significant solid devices in the semiconductor industry. Therefore, it is an inevitable subject to improve their performance in the industrial development. This thesis is a study on the GaN-HEMT and the design of GaN-based integrated circuits. Basing on the material properties of GaN, this article calculated the parameters of GaN-based transistors with transistor equivalent circuit and theories and curvilinear iterative fitting. Meanwhile, the preferred temperature characteristics of GaN-based transistors are demonstrated through comparison between GaN-based transistors and traditional transistors. On the basis, the author has designed integrated circuits with GaN-based transistors to achieve the improvement of performance.