S-Band RF Power Amplifier Design Method

Since the 21st century, with the rapid development of wireless communication, the semiconductor devices and RF power amplifier research process accelerated greatly. As an indispensable core part in wireless communication system the RF power amplifiers get more and more developers' attention. Its design is directly affects the entire wireless communication system performance. In this paper I have used two different methods and two different amplifier tube chips designed two S-band of RF power amplifiers. The two RF power amplifier systems output power are 5W. Main job is as follows:Firstly, makes a further research from theoretical, just as the RF power amplifier technique index, matching structure, linear technology and design method. Secondly, according to the requirements I have designed a new power amplifier module. It is based on Freescale MRF20160 and MRF21010 LDMOS power chips and used by load pull large signal traction method. Again, also I have designed another power amplifier module. This module made by Mitsubishi MGF0911A and MGF0910A GaAs power chips, and it used by S parameters small signal analysis method. Finally, according to the structural requirement, I have designed the RF power amplifier territory and recessed structure; also introduced the PCB layout of draw attention and debugging of power amplifiers, method, and gives the test plan.Simulation results show that both of the power amplifiers conformed to the design indexes requirements. Compared with two power amplifier modules on the simulation results, follow-up debugging, power loss, external power supply circuit and power chip purchasing power. All above has reference value in engineering practice.