Study Of Microwave Power Combined Amplifier Technology

In the wireless communication signal sending equipments,the requirement of sending the signal to enough distance needs to amplify the signal to a certain large one in order to radiate signal from the antenna to free space.With development of semiconductor technology,the output power and frequency of microwave solid-state power amplifier increases in a high speed,but the output power is still limited.So there is a need for research on power combined technology which combine more output power together from different components in order to fulfil the requirement of output power.In This thesis,first of all ,the introduction of different power combined technology,and after the consideration on efficiency,output power,feasibility, size,weight and other factors this thesis decides to implement the power amplifier with 2D circuit power combined technology.There is three stages in this power amplifier and combining output power with wilkinson power divider into the final amplifier.The final stage amplifier utilizing GaAs transistor is simulated in ADS on DC IV-Curve to set the quiescent point,and the impedance matching is implemented on load-pull technology both using lump component and distributed component,and the final result is from harmonic-balanced simulation.After that,design of wilkinson power divider and branch line coupler is also carried out on ADS and the simulation is carried out again on Ansoft Designer for the more precise result,and the final test result is close to the simulation result.The power amplifier is assembled on RO4003 substrate,with 42dBm output power at 1dB compression point,in 300MHz bandwidth the gain is more than 45dB,the result has good performance.