Research On Organic Resistive Memory Devices Fabrication And Characteristic

With the rapid development of information technology, the market demand for low-cost, lightweight and flexible electronic products is growing. However the development of the traditional inorganic semiconductor devices and circuits is gradually approaching the size and cost reduction limit. Organic semiconductor material, known for its unique advantages of low-cost, lightweight and flexibility, has stood out among next-generation semiconductor technologies. In this thesis, the resistive switching organic memory devices are investigated in light of materials, fabrication process and electric characteristics, respectively. The main contents are as follows:Firstly, compared with the traditional inorganic silicon-based electronics, the development of organic electronics as well as the research progress of organic memory are summarized.Secondly, as the key fabrication processes for organic devices, the formation and patterning of organic semiconductor thin films are explored. Vaccum evaporation, solution-processed, organic vapor phase deposition, L-B method and electrochemical polymerization are used for organic thin films deposition due to their special characteristics. The commonly used methods for organic thin films patterning include: shadow mask, inkjet printing, stamp printing and screen printing technology.Thirdly, metal nanoparticles doped resistive memory devices based on Alq3 are fabricated, and their physical and electrical characteristics were analyzed. The Alq3 based thin film memory device doped with Au nanoparticles has not been reported, we take Al and Au for metal nanoparticles dopant respectively. The morphology and distribution of Au nanoparticles are characterized through scanning electron microscopy (SEM) and Auger electron spectroscopy (AES). It is found that the devices don't display bistable switching unless the metal dopants perform as discontinuous granular layer.Finally, TiOPc based single-component and Au nanoparticles doped resistive memory are investigated. There is still no report about the TiOPc based metal nanoparticles doped resistive memory. For comparison, devices with different top-electrodes are also prepared for the switching mechanism analysis. It is concluded that, both the TiOPc/Al interface effect and Au nanoparticles dopant will play an important role on the devices switching properties, and the device electrical performance will be better improved with interface and dopant working simultaneously.