The Studied Of Ohmic Contact On The InGaAsSb Semiconductor Lasers

The paper has mainly studied the characteristics of Ohmic contact of InGaAsSb semiconductor lasers. The research background, domestic and foreign development of the subject has been briefly introduced It has expatiated on the basic knowledge of semiconductor lasers, the properties of theⅢ-Ⅴsemiconductor materials, the main applications, advantages and current research status of the InGaAsSb semiconductor lasers. The related principle of the rectification contact between the metal and semiconductor has also been analyzed and a GaSb based materials metal system designed. Finally, we thoroughly discussed the formation mechanism of n-GaSb ohmic contact, and the reliability problems caused by the inter-atomic diffusion between layers in the process of formation of Ohmic contact. We proposed a structure by adding a diffusion barrier between the contact layer and top layer, and tested its effect by the scanning tunneling microscope and X-ray spectrometer.Concerning the experiments, we have experimentally tested the effects of thickness of diffusion barrier and the annealing temperature respectively, and specifically studied the sample surface morphology and the spread of atomic layers after annealing, analyzed the effects of Mo diffusion barrier on the ample surface morphology and the spread of atomic layers.Through the above work, we can preliminarily conclude that the addition of the diffusion barrier layer can bring certain improvement to the ohmic contact. The structure is condusive to the enhancement of the overall performance of InGaAsSb semiconductor lasers.