Fabrication And Characterization Of Well-aligned Phosphorus-doped ZnO Nanomaterials

ZnO has a large band gap of 3.37 eV at room temperature(RT) and a large excitonbinding energy of 60 meV, high electromechanical coupling factor and high stablily underhard conditions. However, unintentionally doped ZnO is intrinsically n-type and obtainingp-type doping has proven extremely difficult. In this thesis we have synthesized onedimensional ZnO nanosturctures by simple chemical vapor deposition method and studiedtheir growth mechanisms and PL spectra. The major research achievements are listed below:(1) The high-quality phosphorus-doped ZnO nanocombs were synthesized by simplechemical vapor deposition method without the use of any catalyst. The imgages offield-emission scanning electron microscopy show that the phosphorus-doped ZnOnanocombs have a uniform length of 8μm with the diameter of 70 nm. P observed in the EDSspectrum, revealing the incorporation of phosphorus into the ZnO nanocombs. Thephosphorus related acceptor emission was observed in the photoluminescence spectra ofphosphorus-doped ZnO nanocombs at 11K. The acceptor binding energy is estimated to be ~127 meV.(2)The high-quality phosphorus-doped ZnO nanoneedles were synthesized by simplechemical vapor deposition method without the use of any catalyst. And we studiedphosphorus-doped ZnO nanoneedles growth mechanisms and PL spectra. The imgages offield-emission scanning electron microscopy show that the phosphorus-doped ZnOnanoneedles have a uniform diameter of 80 nm with the length of 1.6μm. The phosphorusrelated acceptor emission was observed in the photoluminescence spectra ofphosphorus-doped ZnO nanoneedles at 11K.