Study Of Semiconductor Bridge Thin Film And Doped Phosphorus Process

Explosive initiator can be excited by a low-energy pulse and then explodesthat is a small and sensitive device. In recent years, micro electrical mechanicalsystem explosive initiator, laser igniting explosive initiator and semiconductorbridge, using integrated circuit technology, and some new kinds of explosiveinitiators in order to meet requirements of low-fire energy, short-time,anti-electrostatic and small in size. Among these explosive initiators, thesemiconductor bridge, deposited by IC techniques, is in the most rapid developmentbecause of its safety, reliance and meeting requirements of explosive initiator.The mechanism of Semiconductor Bridge, when the pulse electric currentpasses through the bridge, the bridge gets melted and evaporated at once and formsplasma discharge. Joule heat effect and generated on the surface of thesemiconductor bridge with a layer of silicon weakly ionized gas, then the hightemperature plasma very quickly into the explosive particles, energy transfer forexplosive particles, thus explosives particles detonated powder particles. So dopedsemiconductor quality directly affect the fire workers bridge ignition performance.So the doped is the most important working procedure for Semiconductor Bridge.The research of this paper is in study of semiconductor bridge thin film anddoped phosphorus process.Paper first introduces the basic structure, ignition mechanism ofsemiconductor bridge fire workers and research progress at home and abroad; andintroduced the semiconductor lithography process of Semiconductor Bridge and theimpact that occurs during the photolithography process lithography quality analysisof the factors are introduced. Dry alternating wet oxygen method are introduced inthe next orientation (100) single crystal silicon substrate was prepared SiO2thinfilm process, the effect is to reduce the semiconductor bridge when ignition heatloss; And take advantage of low pressure chemical vapor deposition method inpreparation of SiO2thin films on the polycrystalline silicon thin film, and X raydiffraction, atomic force microscopy, level instrument and semiconductorcharacteristics tester, quality of polycrystalline silicon film crystallization, surface morphology, film thickness, and electrical properties test analysis; Then introducesthe chemical vapor deposition (CVD) phosphorus expanding process, and expandthe phosphorus on silicon substrate and polycrystalline silicon thin film; By atomicforce microscopy, semiconductor characteristics tester and other equipment toenlarge phosphorus basal surface morphology, electrical characteristics test andanalysis; Using X-ray photoelectron spectroscopy (XPS) analysis was carried outon the silicon substrate elements qualitative quantitative analysis. Analysis resultsshowed that the CVD enlarge phosphorus process temperature and expansion of theexpansion of phosphorus in time on the silicon substrate and polycrystalline siliconthin film surface morphology and electrical properties have influence. Paper finallyalso to the research work is summarized and prospected.