| Optical memory is a research hotspot in recent years, being the important development trend of the future optical signal processing systems and photon computer. Image sensor is the core component of camera, has been widely used in digital cameras and space exploration fields. Therefore the study of photon storage characteristics and the charge transfer characteristics of optoelectronic devices, help to change the domestic backwardness in this field and promote the development of the optical and electrical fields. Different characteristics of device require different readout, paper would be divided into three parts.The dumping readout effects of photon storage device and obtain the charge storage capacity has analyzed in the first part, and given two basic control parameters which is the light intensity and integration time, and analyse the parameter setting problem of the detector'readout in low light or bright light conditions. The second part is the third chapter, design driver circuit, including voltage reference, clock circuit and digital control circuit to provide the necessary analog voltage and digital signal to achieve chip integration, intelligence, and miniaturization. The third part is the fourth chapter, design direct injection readout circuit for the GaAs-based linear CCD and analyze the classification the advantages and disadvantages of CCD shift pulse control circuit. The four-phase CCD control circuit was design and the four-phase and two-phase CCD control circuit timing diagram was given. |
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