IWO Films Was Investigated By Electron Beam Vapor Deposition

Tungsten doped indium oxide (IWO-In₂O₃:WO₃) thin films were deposited on glass substrates by reactive electron beam deposition technique, using homemade In₂O₃ ceramics targets with WO₃ dopant. The influence of doping concentration, substrate temperature, oxygen flow rate, film thickness, annealing, SiO₂ and Al₂O₃ buffer layer and gradual growth rates on the structural, optical and electrical properties of the IWO films were investigated in detail.The IWO thin films as the deposited by reactive electron beam deposition technique under the conditions of the doping concentration⁰.35%, substrate temperature 350℃, the O₂ flows³5sccm, and the film thickness is 800?(¹20nm). Typical thin film performances: the mobilityμ⁴7.9cm2V-1s-1 , the carrier concentration n².66×1020cm^-3 and the resistivityρ⁴.89×10-4?cm. The optimizing optical transmittance is ⁷6% (including float glass) at the light wavelength between 400 to 1100 nm. The mobility is improved to 66.2cm2V-1s-1 after annealing at 500℃in an Ar atmosphere. SiO₂ and Al₂O₃ films as buffer layers on glass substrates also can improve the quality of the IWO thin films. The IWO thin films obtained with the gradual growth rates have good thin film quality, with the high mobilityμ⁶7.1cm2V-1s-1,the carrier concentration n¹.84×1020cm^-3 and the low resistivityρ⁵.05×10-4?cm. The optimizing average transmittance is ⁷7% (including float glass substrate) in the light wavelength range from 400nm to 1100 nm.Finally, IWO(In₂O₃:WO₃) thin film was applied in organic thin film solar cell with an efficiency of ³.426%.