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Fabrication Of TiN Thin Films By Ion Beam Deposition And Study On Their Structure And Morphology

Posted on:2017-04-18Degree:MasterType:Thesis
Country:ChinaCandidate:S TongFull Text:PDF
GTID:2180330503958636Subject:Physics
Abstract/Summary:PDF Full Text Request
In this article, conductive high temperature coated conductor buffer layer--TiN films, was fabricated by ion beam assisted sputtering deposition on glass substrates. The textured and surface morphology were analyzed by X-ray diffraction and Atomic Force Microscope, respectively. Effects of sputtering ion energy, assisting ion energy, assisting ion current and deposition temperature on the orientation and surface morphology were analyzed.We found that the orientation and surface morphology varied as the experiment parameters changed. The orientation competition between(111) and(220) is intense. As for non-IBAD samples, in our experimental conditions, the sputtering energy could enhance the crystallinity. Heating provided higher energy to the adatoms, thereby inducing the(110) orientation. As for the IBAD samples, the high assisting ion energy and low assisting ion current could increase the intensity of the diffraction peaks while excessive assisting ion current because of the impact of its thermodynamic factors can destroy all orientation.
Keywords/Search Tags:High temperature superconductor, Coated conductors, Buffer layer, Ion beam assisted deposition, TiN films, Orientation Competition
PDF Full Text Request
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