Studies For ZnO Buffer Layer On The Glass Substrate Mg_xZn_1-xO Thin Films On The Optical Properties Of Impact

MgxZn1-xO ternary compounds are a type ofⅡ-ⅥZnO based semiconductor material. Room temperature ZnO band width of about 3.3eV, MgO band width of about 7.7eV. In recent years there have been reports of MgxZn1-xO band gap can be in the 3.3-7.7eV between successive changes,the band gap in a wide range of continuous variation,so in the light transmission and photoelectric spectral response range covering the blue to ultraviolet,and can be realized on blind region ultraviolet detection, is a new type of wide band-gap II-VI ternary compounds compound semiconductor materials,in the UV detection and emission has a wide application prospect, has become a focus of research. On the MgZnO alloy light emitting device mainly includes the following two aspects:one is MgxZn1-xO alloy as barrier layer of ZnO based device,on the other hand is MgZnO alloy itself as emitting layer. In LED respect, it is difficult to acquire P MgxZn1-xO, relatively light emitting comparatively easy to realize, and have been in the luminous intensity, Mg content and other aspects of the research reported, it is in this context, we carried out some research work related.(1) by Sol-gel method, successfully fabricated on glass substrate MgxZn1-xO film, MgxZn1-xO film and glass substrate between the large lattice mismatch and thermal mismatch, which causes the MgxZn1-xO thin film crystalline quality decline, and lead to ultraviolet light emitting properties of reduced. This paper mainly studies on the substrate and the MgxZn1-xO film with ZnO buffer layer, detected by detecting adding buffer layer on MgxZn1-xO thin film crystalline quality, transmittance, ultraviolet light emitting properties are affected, especially to ultraviolet light emitting performance has improved, the main reason is the ZnO buffer layer is reduced by MgxZn1-xO films and glass substrate between the larger the lattice mismatch and thermal mismatch.(2) in the study of the introduction of ZnO buffer layer prepared MgxZn1-xO thin film crystalline quality and ultraviolet luminescence properties are improved, through sol-gel synthesis of different preparation parameters of MgxZn1-xO films, on the accession to the ZnO buffer layer after the MgxZn1-xO film Mg content, thickness, annealing temperature on the crystalline quality, transmittance, ultraviolet light emitting properties of influence to do research and testing. The experimental results show that, the crystalline quality, transmittance, ultraviolet luminescence in the coating for the number 4 layer have reached the best; and raising the annealing temperature, crystallization quality rises gradually, at 500℃crystallization quality best; with the increase of the Mg content, the forbidden band width gradually increased, the UV peaks shift to lower quality, light, visible luminescence enhancement, analyze the reasons for with the increase of the Mg content, the introduction of more defects, resulting in the visible band luminescence enhancement, and formed the band.This article carries on the research work for the deep understanding of MgZnO thin films and the nature of the development of MgZnO film based UV light emitting device has important scientific significance and application of reference value.