.0.13 ¦¬m Eeprom Device Testing

EEPROM (Electrically Erasable Programmable Read-Only Memory) is a type of nonvolatile memory device with the stored data must be kept when power is removed. Also it can be repeatedly erased and written electrically. Commonly, it can keep the stored data for decades at room temperature and endure up to one million time erase & write program cycling. With its excellent electrical performance in small size memory, EEPROM is widely used in consumer electronics, industrial electronics and other electric product areas.This paper is based on the project of 0.13μm EEPROM process development and device verification which developed together by Shanghai Fudan Microelectronics Co.,Ltd and Singapore Chartered Semiconductor. In this paper, we will discuss the NVM (Nonvolatile Memory) theory and introduce the test platform we build for the 0.13μm EEPROM project, then analysis the device performance. It mainly includes:1) Study the basic theory of NVM device. First, analysis the mechanism of semiconductor physics related to nonvolatile memory. Then, have a discussion on three NVM types (EPROM,EEPROM,Flash) and their typical device structures.2) Introduction of the 0.13μm EEPROM cell & array and its process. Briefly introduce the target EEPROM cell & array and the development of the device and process.3) Description of the self-build test and verification platform. The platform mainly contains NB0401 test system, Agilent power supply, Agilent multimeter, temperature forcing system, self-designed PCB test board, MCU(Micro Controller Unit) program and test script. The test process would be described as a flow chart.4) Process verification and device features analysis. The device characteristic includes cell threshold voltage versus erase & write time and program operation high voltage, endurance degradation,data retention and temperature characteristics. Now, the process and device structure is successfully developed, and finally apply to the serial EEPROM product and smart card product.