Film Rc Network Integration Process

With electronic systems developing towards smaller, higher-speed, more functions and more capable, the advancement of electronic components is heading more and more in the directions of miniaturization, thin-film based, integration and multifunctional. In electronic components, the active devices have become highly integration, however the passive components are all long time used in the form of discrete components. Therefore, the miniaturization of electronic systems depends mainly on thin-film based and highly integration of the passive components. In this paper, thin film integrated processes of two kind of typical passive components, resistors and capacitors, have been studied, including study on fabrication and properties of silicon nitride (SiNx) thin films MIM capacitors, fabricating of tantalum nitride (TaN) thin films resistors, improvement and optimization of patterning process of TaN thin films, study on fabrication and properties of thin films RC filters. The following results are obtained:(1) The Au/NiCr/SiNx/Au/NiCr structure MIM capacitors were fabricated on glazed alumina ceramics substrate. The electrode thin films were prepared by vacuum resistive evaporation method, and the SiNx dielectric thin films were deposited with the PECVD method. The thin films were patterned by photoetching technique. The dielectric properties, temperature characteristics and I-V properties of capacitors were studied. The results show that the MIM capacitors exhibited excellent voltage stability and low loss, At 1MHz, tanδis 1.92‰. From -55 to 150℃, TCC is 258ppm/℃. The I-V properties of MIM capacitor show good symmetry, low leakage current density and high breakdown voltage.(2) The TaN thin films were prepared by radio frequency (RF) reactive magnetron sputtering, and effect of sputtering power density on TCR of TaN thin films resistors was investigated. At 0.64w/cm2, the TaN thin film resistors of 50?/□sheet resistance and low TCR (-46ppm/℃) were obtained. By investigating patterning process of TaN resistive thin films, more optimized patterning process of TaN thin films was obtained.(3) By combining the thin films integrated process of TaN resistors and SiNx capacitors, thin films integration of resistance-capacitance network was successfully achieved, thin films RC filter network was prepared, and technical foundation was laid for integrated applications of the passive components. Properties of the thin films RC filters were tested using a vector network analyzer. The results show that 3dB bandwidth of the thin films RC filter is about 90MHz. When the frequency is lower than 200MHz, the thin films RC filter can be equivalent to a typical RC low-pass filter circuit. And It has an ideal low-pass filtering performance in the testing 450MHz frequency range.