Conclusions Semiconductor Transducer Element Study

In this paper, structural parameters on the electrical exploding and safety performance of semiconductor junction bridge are theoretical analysed and four different shape and size of the bridge area, two doped semiconductor junction bridges are designed. Under the condition of the electric capacity discharge, the semiconductor junction bridge is ignited, and function mechanism and ignition performance of the new intiation component are studied. Semiconductor junction bridge is tested in electrostatic discharge and 1A1W5min experiments.Major conclusions are summarized as follows:(1) Low doping concentration of silicon semiconductor chips produced semiconductor junction bridge, the discharge capacity is 44.8,32.3 and 22.7μF, charging voltage is 160V, the occurrence of the avalanche breakdown, reliable ignition.(2) Under the condition of the electric capacity discharge,High doping concentration of the semiconductor junction bridge,mainly the zener breakdown, silicon element can not generate plasma, and thus difficult to carry out rapid and reliable ignition of the pyrotechnics. Therefore, in the design of the semiconductor junction bridge, the appropriate n-type silicon doping concentration to be choosed.(3) Breakdown voltage and the the electrical exploding performance are significantly affected by n-type silicon doping concentration.(4) Under the condition of the electric capacity discharge, the discharge voltage below the breakdown voltage, circuit current is nearly zero, so the semiconductor junction bridge has good DC blocking characteristics.(5) The performance of the semiconductor junction bridge is not changed by the electrostatic and radio frequency. and thus result show that the bridge has a good performance to the electrostatic, RF and stray current. After electrostatic discharge and lAlW5min experiments, semiconductor junction bridge can be normally initiated and ignited.