Zno Thin Films Prepared By Light-emitting Devices Pld Legal System Study

ZnO is a wide direct band gap semiconductor with band gap of 3.37eV and exciton binding energy of 60 meV at room temperature. It has the same structure as GaN and become a new opto-electronic material for application in new optical devices as a promising substrate material for GaN.Pulsed laser deposition(PLD)is a newly developed film growth technique. In this technique, high density laser ablates the target and produces ZnO plume depositing on heated substrate in high vacuum background. In this thesis, we use the PLD technology in the semi-insulating (001)-oriented single-chip GaAs prepared ZnO thin film. in the annealing 400℃conditions, the successful adoption of preparation As the spread of the P-film Zn0. then In accordance with our p-type ZnO thin films prepared by the conditions,We have successfully prepared p-ZnO / n +-GaAs heterojunction devices.At room temperature electroluminescence test, which can be tested to the deep level defects ZnO layer of electric blue-green spectrum, but also to test GaAs layer of electric infrared spectra.On this basis,we have preliminary studied Zn0 homogeneous pn junction light-emitting devices preparation.