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Chip Parasitic Inductance Circuit Parameter K Of The Research And Application

Posted on:2009-03-15Degree:MasterType:Thesis
Country:ChinaCandidate:P XiaFull Text:PDF
GTID:2208360272989596Subject:Electronics and Communications Engineering
Abstract/Summary:PDF Full Text Request
In the ingegrated circuites with frequency above GHz, parasitic inductive effect has highly influcenced the circuit performance, therefore requiring efficient algorithm for extraction of frequency based inductance based on good localization property of K element(inverse of the partial inductance), now Synopsys parasitic extraction tool Star-RCXT has put inductance extraction based on K element as a production feature, newer version of simulation tool Hspice also support direct read of K element, this paper manily introduce the basic theory of K element extraction in Star-RCXT, the conversion of K element to inductance, the correlation of Star-RCXT K element based extraction and FastHenry, and the application of K element.
Keywords/Search Tags:inductance extraction, K element, reluctance, partial reluctance, high frequency
PDF Full Text Request
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