P-type Transparent Conductive Film And The Diode

SrCu₂O₂,CuAlO₂ and CuFeO₂ ceramics were synthesized by solid state reaction and corresponding thin films were successfully fabricated by channel spark ablation, respectively.The electrical,optical properties and structure of these ceramics and films were characterized by four-probe method,Hall system,spectrophotometer, XRD,AFM etc.Also,a serie of CuA1S2:Zn films were deposited on glasses in the CSA apparatus for the first time and the relations between their physical properties and ablation parameters,such as argon partial pressure,substrate temperature and current were investigated in detail.Furthermore,using this novel p-type thin film transparent pn diode was prepared together with n-type IWO film.SrCu₂O₂,CuAlO₂ and CuFeO₂ ceramics and films all exhibite p-type conductivity.The resistivities of SrCu₂O₂,CuAlO₂ and CuFeO₂ films are 260Ω·cm, 110Ω·cm and 85Ω·cm,respectively.P-type CuAIO2 film has a better optical transmittance compared with the other two series.CuAl_0.90Zn_0.10S₂ film,prevailing in conductivity,maintains the chalcopyrite structure which was indicated by XRD pattern.Its hole conduction was confirmed by positive Seebeck and Hall coefficients and its best electrical conductivity and carrier mobility could reach 65.3 S·cm^-1 and 5.7 cm²V^-1S^-1.It is also obvious that argon partial pressure,substrate temperature and supply power of ablation,as well as annealing process could have remarkable effects on opto-electrical properties of CuAl_0.90Zn_0.10S₂ films.The highest average visible transmittance of these films was above 70%.The pn-heterojunction diode formed by CuAl_0.90Zn_0.10S₂ and IWO film exhibits rectifyingⅠ-Ⅴcharacteristics with a threshold voltage of 0.5V and its forward/reverse current ratio is larger than 80.The transparent device has an average visible transmittance of more than 50%.