| Wide band-gap material is one of the hottest materials researched in recent years, h is a wide-band oxide semiconductor with a bandwidth of Eg=3.6~4.0eV'M. It has been widely applied in many fields such as solar cells, electric heating devices, transparent electrodes, and gas sensors, etc. due to its excellent properties, i.e., wide-band gap, high transparency in visible region, low resistivity and high stability . Although SnO has been used in so many areas, p-type doping of SnCh has never been reported.In this paper, p-type transparent SnO22 thin films were successfully fabricated by-sol gel dip-coating method using indium as acceptor dopant. The prepared films (SnO2:In) were characterized by X-ray diffraction, Hall effect measurement, UV-Visible absorption, and XPS. It was found from the XRD results that the crystal structure of p-SnO2 has not been changee by In doping, and the structure of SnO2:In thin film is still rutile structure. Hole concentration as high as 1.7X 1018/cnr' was achieved'14'. The effects of process temperature and dopant concentration have been studied, and the mechanism of hole generation was discussed. In addition, a prottype of heterojunction pn junction consisting of n-In2O3 Sn/p-SnO2;In was demonstrated.Other p-type thin films were also successfully fabricated by sol gel dip-coating method, including zinc doped SnCh and zinc doped ZnO. however, the properties of these films were not as good as... |
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