| Micro-electronics is the basic part of the electronic technique. GaAs devices have shown its essentiality on the area of military applications and microwave and millimeter communications. The design and manufacture of MMICs (Microwave monolithic integrated circuit) has been limited to a few of graduate schools of defence industry in China. Several MMICs were designed in this dissertation by means of the fabless-mode IC design and some creative works have been formed on this aspect.At first, an impact GaAs monolithic SPDT switch for X band applicationswill be presented. The on-wafer tested results showed that the isolation of the switch was more than 30dB in the band of 8~11 GHz. Its insertion loss was less than 1.2dB. The circuit uses only two passive PHEMT devices in shunt configuration to make it very compact.An X band, high gain, low noise amplifier is designed, fabricated, and tested. This MMIC provides no less than 21 dB gain with a noise figure of 2~2.5 dB in the band of 9-14 GHz. The 1-dB gain compression power output is +19 dBm at 11.5 GHz.A kind of 3dB quadrature coupler was designed using a GaAs pHEMT technology. Using this coupler, a 21-28 GHz balanced amplifier was designed. Its power gain was 18~20 dB and the output and input return loss was less than -20dB in the band of 21~28 GHz.The output 1dB compression power was 21dBm at 26GHz.Using the coupler above, a 26-33 GHz single balanced passive mixer was designed and fabricated. The mixer has a conversion loss of 6~8.5 dB,an LO-RF isolation of more than 12dB,an RF-IF isolation of more than 35dB, and an LO-IF isolation of more than 40dB.All these circuit were designed and simulated using the OMMIC's GaAs pHEMT technology. They were fabricated through the CMP project and measured on wafer. The measurement results showed that these MMIC could achieve the expected performance through the use of design kits, circuit simulaton software, and layout design tools. Some useful efforts were made to promote the industrialization of MMICs.
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