Zno Fluorescent Film Preparation And Curing

Zinc Oxide (ZnO) is a wide band-gap semiconductor (3.37eV at room temperature) with the high exciton binding energy of 60 meV. This make it be the perfect material for using in ultraviolet laser and vacuum fluorescence display, in vacuum fluorescence display, we pay more attention in the blue-green emission to make it be the green fluorescence material used in the field of FED or make it be used in shortwave LED.Firstly ZnO thin films were prepared on glass substrates with the method of pulsed laser deposition, then we adopt the sulfuration technics in our experiment for the first time to add the thickness of the Vo on the precondition of not debasing the crystal quality. The samples before sulfuration and after sulfuration were respectively analasized by the X-ray diffraction (XRD) pattern and field emission scanning electron microscopy (FESEM) pattern. The samples after sulfuration were also analasized by photoluminesce(PL) pattern. We got conclusion hereinafter from the analysis:1. We systematically analysized the influence of the oxygen pressure etc to the crystal quality of the ZnO film, and when the pulsed laser voltage was 12KV, the space between target and glass substrates was 3.0cm and the oxygen pressure was 8.0Pa, the crystal quality of the sample is better.2. We systematically analysized the influence of the sulfuration time and the sulfuration temperature to the crystal quality of the ZnO film. the result indicated that the crystal quality of the ZnO film improved when the sulfuration time and the sulfuration temperature increased.3. We systematically analysized the influence of the sulfuration to the green light emission. When the sulfuration time was 30 minutes and the sulfuration temperature was 500°C the green light emission was strongest.