A Power Vdmos Hspice Macro Model

Power VDMOS(Vertical Double-Diffusion MOSFET)is the most favorable device available for high speed, medium power applications because of its characteristics such as high input impedance, high power gain, easy to drive and good thermal stability. However, traditional MOSFET models in HSPICE library are built for lateral MOSFET with small power and they can't represent the characteristics of Power VDMOS well. The most popular method to solve this problem is using basic models that have been already defined in HSPICE library to build an equivalent circuit, and then use this equivalent circuit as the simulation model for Power VDMMOS. This is so called macro-model.This thesis comes from a cooperating project which is to build SPICE simulation model for a latest Power VDMOS product of a well-known semiconductor company in the USA. Base on detailed analysis about physical mechanism of Power VDMOS, we present a macro-model which can accurately represent the characteristics of target Power VDMOS from -50℃~125℃. Major contents of this study are abstracted as following:1. Analyze the DC, thermal and dynamic characteristics of Power VDMOS, and propose a new equivalent circuit.2. Extract all the parameters of the components in equivalent circuit. There two extracting strategies in this thesis: (1) Transform the device characteristics equation to linear form and use"least squares fit"method to extract relevant parameters. This method is applied in the extraction of thermal and capacitive parameters. (2) Extract parameters by relevant software. Some device characteristics equations are so complex that they are hard to be transform. In this condition, use parameter extraction software...