The New Structure Of The Icc Bottom Screen High-frequency Integrated Device Design

The rapid development in wireless communication markets result in increasing demands of RFIC/MMIC chips. Recently , as great progress in semiconductor technologies,the working frequency of MOSFET in CMOS can be up to 50GHz. Thus it is possible to realize high frequency integrated-circuits in Giga-Hertz band by using pure CMOS process. So many research results in these areas help expand applications in the telecommunication and semiconductor industries.Basing on other researchers'work,this paper has put forward a novel type of ICC( Induced Current Cancellation ) shielding layer for RFIC/MMIC performance improvement,to reduce high frequency loss,increase Q value, and expand its application frequency range. And present how to realize RFIC/MMIC components such as I/O Pad, inductors, baluns and so on by applying ICC shielding layer structures. Furthermore co-design methods of IC component structure and foundry process structure designs has been presented in this thesis.The main new points are:(1) A novel type of ICC shielding layer structure has been first studied by classifying as L-type ICC and C-type ICC. And conclude that which ICC structure is more suitable for IC realizations of I/O Pad, inductors, baluns etc.(2) Optimize designs of I/O Pad, inductors, baluns by ICC structures.(3) Investigations show that ICC shielding layer structures help reduce high frequency loss, enhance Q value, and widen frequency application range of IC components.(4) And co-design methods of IC component structure and foundry process structure designs has been presented in this thesis.