.si / Soi Mmic Passive Components Research

With the rapid development of microwave communication technology, people's requisition for communication device is more and more higher. Monolithic microwave integrated circuits gradually replace waveguide system and hybrid integrated circuits in the microwave fields for its advantages such as small size, light weight, high reliability, stability and so on. In recent years, the deep submicro CMOS craft is ripe gradually and the performance of on-chip integrated circuits made with CMOS technology gradually improves. Passive circuits such as integrated inductor and CPW need to be realized along with all of other devices in MMIC.In fact, the need for low loss and high quality factor passive circuit is increasing. The loss of CPW and the quality factor of integrated inducor made on low-resistivity silicon are both poor, but those made on SOI (called silicon technology of the 21th century) will be improved obviously. The experiment researchs of the CPW and indoctor made on silicon and SOI are reported in this dissertation. Major contents of the study are abstracted as following: 1. The transmission loss properties of CPW on different substrates are investigated systematically. The experiment results show that the attenuation of the CPW line on SOI (20Ω·㎝) is much lower than that made directly on the silicon (20Ω·㎝), and the loss on silicon with 1 μmSiO₂ can be reduced greatly . The attenuation for the CPW at 2GHz is only 0.13dB/mm on high resistivity SOI (1000Ω·㎝). The loss of the transmission lines is reduced effectively with shield ground on the low-resistivity silicon, which is comparable to the result of high resistivity SOI. 2. The review of integrated inductors is given and the structure and model of integrated inductors are introduced. The meanings of the value and the factor of the inductor are explained and the influence to factor of the parasitical parameters is analysed by HFSS. 3. Two types of the planar spiral integrated inductors are made on silicon (0.5Ω·㎝), silicon (0.5Ω·㎝) with shield ground and SOI (0.5Ω·㎝and 20Ω·㎝). De_embedding can help obtain the real S parameters because it can get rid of the influences of the parasitical impact of the pad to inductor. Experimental results are analyzed in detail and some results are obtained: the factor of the inductor made on silicon with shield ground can reduce the parasitical impact of the silicon substrate; the quality factor and the self-resonance of the inductor made on SOI can be improved relative to that of the inductor made on silicon. These analyses and results are important and useful for the design of integrated inductors and the application of SOI.