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High Linear Power Audio Transistor Design

Posted on:2006-10-09Degree:MasterType:Thesis
Country:ChinaCandidate:Y L LiFull Text:PDF
GTID:2208360152497313Subject:Microelectronics and Solid State Electronics
Abstract/Summary:PDF Full Text Request
The audio high-power transistor belongs to the low frequency scope,it developed in70's,having became the very important device now,and the amplier based on it is the core ofstereo set equipments. Low-frequency power transistors have been largely applied in audiosystem. The parameters of loudspeaker box such as volume, weight, property, price, reliabilityand etc. mostly depends on low-frequency power transistors, so it has great value and practicalsignificance to improve their properties .On the basis of operating-characteristic of other audioBJT, some new structures and new materials, which help to improve devices'properties, areproposed in this paper. The features and functions of the transistor are analyzed in detail, and thenew design scheme is proposed.In view of the contradiction among frequency, output power and dissipation power, adeep-trench junction structure filling with isolated materials are proposed.In order to improve bipolar power devices'reliability, an overload-temperature defendingtechnology with non-linear base ballasting is proposed.
Keywords/Search Tags:low-frequency power devices, junction termination, ballasting, reliability
PDF Full Text Request
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