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Residual Stress And Device Thermal Failure Of Electronic Packaging, Optical Measurement Experiments And Numerical Simulation Study

Posted on:2004-06-07Degree:MasterType:Thesis
Country:ChinaCandidate:J H SunFull Text:PDF
GTID:2208360092981648Subject:Optics
Abstract/Summary:PDF Full Text Request
Thermal and welding residual stress often produces in the proceeding of the electronic package, The residual stress release and thermal deformations of the microelectronics will reduce the assemble intensity between the chip and package, and then debase the electrical performance of the assemble circuit, Numerous thermal cycling will lead to thermal fatigue or thermal failure of the microelectronics. In order to reduce the thermal strain, improve the reliability and electrical performance of the Microelectronics, It is important and necessary to test the thermal deformation and the residual stress of the assemble circuit.In order to study the thermal performance and residual stress ofmicroelectronic subassembly, In this paper, a newly optical interferometry methodfor 3-D displacement measurement is developed based on wavefront interference theory. In which the moire Interferometry provide the in-plane displacement, But the system is different from the conventional interferometry, The system applies the double diffraction of the specimen grating, The in-plane displacement sensitivity is a factor of 2 higher than that of the conventional moire Interferometer. Twyman/Green Interferometry method for out-of-plane displacement measurement is adapted , The advantages of the optical set-up are structure novelty, and the fringe patterns of the displacement fields shown high contrast and spatial resolution.In this paper, A novel whole-field residual stress measurement technique is developed using Three-Dimensional Moire Interferometer and hole-drilling method coupled with Finite element Method. The technique is successfully applied to thermal deformation and residual stress measurement in F-1C, In these measurements, the thermal strain is achieved and the whole-field residual stress distribution, including the possible stress concentration, is obtained. From these measurements, We can see the thermal strain and residual stress plays a significant role in the mechanical performance of a structure and its structural integrity. Providing the important theory and experimental data for improving the F-1C.
Keywords/Search Tags:Microelectronic package, Residual-Stress, Finite element Method, Three-Dimensional Moire Interferometer Method
PDF Full Text Request
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