Semiconductor Laser Performance Characterization And Pulse Measurement Techniques

This paper presented the results on the development of a universal system for the characterization of different types of semiconductor lasers as well as the characterization research on this system. By using this system under different pulse driving conditions, the I-P, I-V and spectral characteristics of InAsP/InGaAsP ridge wave-guide multi-quantum well laser diodes, InGaAsSb/AlGaAsSb ridge wave-guide multi-quantum well laser diodes and InAlAs/InGaAs/InP mid-infrared quantum cascade laser chips have been investigated, by analyzing the experimental results, three types of characterization methods were developed to determine the thermal property of the semiconductor laser chips. The research works could be summarized as following:A computer-controlled characterization system for semiconductor lasers has been set up. It is mainly comprised of computer, pulse generator, digital oscilloscope, FTIR spectrometer, Helium recycling or TE cooling system, heat sink with probe stage, current probe and photo-detectors etc. This system has broader wavelength range and wider pulse tuning ability, so it could satisfy the measurement requirements of many types semiconductor lasers.By utilizing GPIB technology, controlling software has been developed to control this characterization system. By using this software, the hardware configuration, measurement process control as well as data acquisition and storage could be executed conveniently. Experiments show that this software has friendly interface, good reliability and security.Based on this characterization system, the I-P, I-V and spectral characteristics of InAsP/InGaAsP ridge wave-guide multi-quantum well lasers, InGaAsSb/AlGaAsSb ridgewave-guide multi-quantum well lasers and InAlAs/InGaAs/InP mid-infrared quantum cascade lasers are evaluated, and parameters for driving and controlling of those semiconductor lasers were discussed.Three thermal characterization methods, which are based on I-P, I-V and spectroscopy methods respectively, are developed. Experimental results showed that, by analyzing the spectral, I-V and I-P characteristics of the lasers, the thermal resistance and other the thermal parameters could be deduced. By using those methods, The thermal characteristics of InAsP/InGaAsP ridge wave-guide multi-quantum well lasers, InAlAs/InGaAs/InP mid-infrared quantum cascade lasers and InGaAsSb/AlGaAsSb ridge wave-guide multi-quantum well lasers have been studied in detail, the results also have been reported and discussed.