Investigation Of The Fabrication Technology And Characterization Of PTCDA/p-Si Photo-Electric Detector

PTCDA/p-Si organic-inorganic photo-electric detector is a novel device.This detector has many significant properties such as stable performance,fast response speed,high sensitivity,especially its high quantum photoelectric conversion efficiency and broad-band response in visible and near infrared bands.This thesis is mainly focused on the preparation of PTCDA/p-Si Photo-electronic detector,preparation and purification of PTCDA.The performance of detectors prepared with different purity levels of PTCDA was analyzed.The detector with the best performance was used to select the best electrode.And it was analyzed that the cathode effect on the performance.The photo-electronic detectors with both Al/ITO/PTCDA/p-Si/Al and Al/Ni/ITO/PTCDA/p-Si/Al structures were prepared.We studied the preparation and characterization of the detectors.