Research And Design Of Gain Amplifier Based On GaAs HBT

Microwave devices are widely used in areas such as wireless communication, optical fiber communication and national defense areas. As the fast development of microwave technology, we have more and more demands about the performance of the devices. The corresponding research and development technology and intellectual property is becoming more and more concerned and important.In this paper, we firstly introduce and make comparisons about microwave devices, Leading to GaAs HBT. Study the development trend, growth technical and characteristics. In addition, the GaAs HBT is used to design a Gain block which has high linearity, high gain flatness and very good temperature stability.The Gain block uses the darlington pair structure. In this paper, we have analysed The characteristics of the dalington structure, matched the input and output resistance and optimize the OIP3 by EM simulation. Finally, it is taped out by WIN’s H02U32 foundry.