| The rapid development of smart phones and tablet PCs increased the demand of high-speed, large capacity non-volatile memory. It is expected that embedded flash memory based on floating gate technology will reach its scaling limit in the near future. And flash memories have got the disadvantages such as high operating voltage, slow read and write speeds. Researchers are developing new non-volatile memory including ferroelectric RAM (FeRAM), magneto-resistive RAM (MRAM), phase change memory (PCM, or PRAM) and resistive switching RAM (RRAM).Because of its low operating voltage, short operating time and small unit area, RRAM is considered to be the most potential next-generation non-volatile memory. RRAM based on metal oxides has its simple structure and is compatible with logic processes, etc. RRAM is attracting more and more attention for its great potential. As for the research of mechanism of resistive switching phenomena, conductive filament hypothesis is most widely accepted. However, details of forming and rupture of conductive filament remain still unknown.This work studies the material properties of NbAlO based and HfAlO based RRAM. NbAlO and HfAlO film was deposited utilizing ALD (atomic layer deposition). This paper also measured the electrical characters at low temperatures. Based on the conductive filament hypothesis, we analyzed the effects of charge trap/detrapping process and Joule heat on the RESET process. After that, we summarize the conclusions for the full paper. |
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