Growth And Structural Analysis Of Organic Semiconductors 16,17 - Di - Octyl Alkoxy

With the deepening of the information revolution, the requirements for the performances of the transistor, one of the most important components of integrated circuit, become much stricter. Nowadays, inorganic transistors have been miniaturized to nanometer scale, facing the barriers such as complicated fabrication procedure, heavy diffusing calories and quantum effect. Thus, organic semiconductive materials are considered as the potential candidates, which have the advantages of wide variety of sources, low working voltage, simple processing technology (low cost, process under lower temperature, suiting scale production), and compatibility with flexible substrates.The study about organic transistors has achieved remarkable results in the fields of storage, displaying, e-book, etc. However, insufficient performances of organic transistors, especially the relatively low mobility, still exist, limiting their practical applications. Single crystal is the ideal alternative, which can overcome the impurity in the material and the structure defects effectively, therefore, the mobility will be greatly improved.Accordingly, in this thesis, we try to use the solution method to grow single crystal of16,17-bis(octyloxy)-anthracene-5,10-dione. Through the optimization of different solvent systems, temperatures, and volatilization rates of solvents, single crystal of16,17-bis(octyloxy)-anthracene-5,10-dione is successfully prepared.Secondly, the obtained single crystal is tested by XRD to get the crystal parameter:a=30.6303; b=30.6303; c=18.2785, alpha=90; beta=90; gamma=90。Space group:I41/a。The above results will provide us with the reference for the growing of organic semiconductive single crystal.