Crosstalk Between Neighboring Organic Field-effect Transistors Based On Rubrene Single Crystal

In the past ten years organic electronics has promised to revolutionize our daily life by making cost-effective electronic circuits and sensors available production techniques,for their ubiquitous applications in wearable components,rollable,conformable devices and point-of-care applications.With the development of miniaturization and high integration of organic electronic devices,the crosstalk deserves great attention.Crosstalk is the mutual interference between devices,and its existence will affect the basic performance of the device,which poses a great challenge to the design of the circuit and the normal opening of the circuit.How to reduce the interference between devices is an urgent problem that needs to be solved in the development of high integration organic circuits.For the large area of organic field-effect transistors(OFETs),the researchers used the patterning of the semiconductor layer to reduce the crosstalk,but the patterning of the semiconductor layer reduced the precision,integration,efficiency of the circuit,and increased production consumption.So we would prefer to design circuits on the same semiconductor,and the interference between devices will be achieved through the design of electrodes.Aiming at the problem of interference in integrated circuits,this paper is based on the rubrene single crystal to experimentally study crosstalk between devices.We used one organic crystal to fabricate multiple operated devices to study the relationship between the crosstalk and device space,source/drain electrode interval(channel length)and gate electrode width.The crosstalk can be effectively limited and even eliminated through the design of the electrode.The main results are as follows:1?Preparation of rubrene crystal OFETs and study of interference between devices.Rubrene single crystals were synthesized by PVT method.Polarization microscope,XRD,SEM and AFM were taken turns to explore the crystal structure and observe the surface appearance.Through the characterizing results,we selected high quality single crystals and fabricated multiple field-effect transistors based on one rubrene single crystal microbelts.The crosstalk between devices was tested and it was assumed that the interference between the devices was caused by the extra carrier of the channel edge.2 ? Study on the influence factors of crosstalk.We used the probe to break the semiconductor to study the relationship between the interference and the source/drain electrode interval(channel length),the gate voltage and the gate width.We found that the crosstalk was mainly due to the carrier induced from gate voltage,when the gate voltage is added to the device,the crosstalk exists,when the gate voltage is not added,the crosstalk is almost zero.And the crosstalk decreases with the decrease of the source/drain electrode interval(channel length)and gate electrode width.3?The reduction of crosstalk between devices.Based on the relationship between the interference and the source/drain electrode interval(channel length),the gate voltage and the gate width,we used a device structure with gate width less than or equal to the width of source leakage electrode to effectively reduce or even eliminate interference.