Based On The Local Substrate Integrated Artificial Media (l-siad) Microwave Cavity

The rapid development of modern wireless communication technology has excited the developing tendency of compactness, miniaturization and low cost for the microwave radio frequency circuits.and that leads to a research on new materials, new structures and new techniques. As one of the main transmission lines of MMIC. the microstrip lines have received a lot of attentions.The metallic posts in the localized substrate integrated artificial dielectric (L-SIAD) structure could increase the distributed capacitance of the microstrip circuit.resulting in the reduction of the characteristic impedance and the increase of the effective dielectric constant.and then it would reduce the width of the microstrip line,shorten the guided wave length and effectively reduce the size of the circuit.In the low frequency miniature microstrip circuits, the loss may be negligible. However, as frequency and circuit scale increase, the total loss accumulated in the large-scale circuits becomes bigger, which will affect the performance of the microstrip circuits. In this way, it is thus impossible to neglect the losses.First of all, this thesis introduces the basic characteristics of the microstrip line and the L-SIAD structure,mainly focusing on the working principle of dielectric loss and conductor loss.Then, in order to analyse dielectric loss and conductor loss of L-SIAD,the paper presents the methods for calculating the losses.and then these methods are verified to be correct.Also,with the help of software simulation, we calculated the dielectric loss and conductor loss.Finally, the paper describes the application of L-SIAD structure in silicon integrated circuits and microwave resonantor. We calculated the dielectric loss and conductor loss in silicon integrated circuits and discussed the effect of L-SIAD structure in the microwave resonantor.