Piezoelectric Thin Film Zno And Of Sbn Sputtering And Its Performance

ZnO is a classic II-IV semiconductor with a wide direct band gap of 3.3eV at room temperature. It has been investigated extensively because of its interesting electrical, optical and piezoelectric properties making suitable for many applications such as solar cell window, transparent conductive films, bulk acoustic wave devices and light emitting diode (LED). Strontium barium niobate (SrxBa1-xNb2O6, 0.2< x <0.8, SBN:100x) possesses the largest diagonal electro-optic coefficient, excellent piezoelectric, pyroelectric properties and photorefractive sensitivity. SBN has currently being investigated as a potential material for many micro-device applications such as pyroelectric infrared detectors, electrooptic modulators, DRAM, etc. Titanium nitride has been used very successfully in a variety of applications because of its excellent properties, such as hard and decorative coating and also diffuse barrier in semiconductor technology. This material is of interest because it exhibits a number of properties similar to metals (such as good electrical conductivity) while retraining characteristics (covalent bonds, hardness, and a high melting point) found in insulating materials.In this paper, the magnetron sputtering and sol-gel growth technique, the growth of ZnO, SBN and TiN thin films and the up-to-date progresses in the research of them were reviewed. Zinc targets, SBN75 targets and Titanium targets were used for magnetron sputtering to fabricate ZnO, SBN and TiN thin films. Highly c-axis oriented ZnO, SBN and TiN films could be synthesized on Si(100) substrates when a certain fabricated conditions were selected. The microstructures, physical, optical and electro-optic properties of the SBN60 films were characterized by using X-ray diffractometer (XRD), rocking curves, atomic Force Microscope (AFM), and spectrophotometer. The effects of growth parameters on the quality of the films were discussed, such as partial pressure, substrate temperature, sputtering power, annealing temperature, and buffer layer (KSBN for SBN75).This paper indicates that partial pressure, sputtering power, substrate temperature, and annealing temperature are all the factors which can result in the highly c-axis orientation of ZnO films on Silicon substrate. At the condition of O2:Ar=1:2, sputtering power = 150W, substrate temperature = 350℃, and annealing temperature in oxygen atmosphere = 800℃, the ZnO thin films will exhibit an excellent orientation along the c axis. The doped of the potassium ions in the SBN solutions make the realization of orientated films became feasible, and KSBN layers can work as the buffer layers to improve the lattice mismatch between the SBN film and the substrate. The high c orientation SBN75 thin films were fabricated on the Si(100) substrates with KSBN working as buffer layers. The research indicated that the crystallized phase and orientation degree of TiN films were dependent on partial pressure and the current of DC sputtering. At the condition of sputtered only using N2, 1.6A of the current of DC sputtering and the 500 ℃ of the substrate temperature, the ZnO thin films will exhibit an good orientation along the c axis.The existence of the potassium ions in the precursor solutions make the realization of orientated films became feasible, and the high post-annealed temperature makes it become reality. It is demonstrated that the high post-annealed temperature results in the severe inter-diffusion of K, Sr, Ba, Nb, Si ions in the interface, and the diffusion lead to the existent of amorphous layer between the top SBN films and bottom Silicon substrate. This amorphous layer can serve as the buffer layer of the top SBN60 films and result in the high orientation of it. The refractive indexes of the ZnO films under different fabricated conditions were modulated by using the Forouhi-Bloomer model. It is found that the refractive index of ZnO films deposited on sapphire substrates at wavelength 633nm are about 1.97, which is less than that of the bulk ZnO (n=2). It is because that (1) the ions with high kinetic energy...