Rf Magnetron Sputtering Of Nitrogen Doped Zno Thin Films And Its Properties

Being a vigorous adversary of GaN,ZnO has lots of advantages and thus attracts much interest due to it's prospects in protential optoelectronics applications.To realize these device applications,an imperative issue is to fabricate both high-quality and steady p-and n-type ZnO and ZnO-based homojunctions,however,like most wide bandgap semiconductors,ZnO has the"asymmetric doping"limitation.It can be an easily doped high-quality n-type,but it is difficult to dope p-type.so the key issue in exploiting ZnO,as in the case of GaN,is in achieving p-type doping.In this work,we mainly concern about this issue,and moreover this work is also expended from it.In this paper,using frequency magnetron sputtering,performs research on preparation for high-quality ZnO:N films,Structural,morphonological,electrical characteristics as follow:1.As the substrate tempetature increased from room temperature to300℃,the ZnO (002) crystalline changed to be better;the carrier concentration trend down wards due to increasing of N doping of the ZnO films.2.ZnO:N films were prepared at 300℃and then annealed at 600℃,ZnO:N films were confirmed as p-type by Hall measurement.3.The carrier concentration decreased and film resistivity increased with increasing N2 flow rate,as N2 flow rate was at 10 sccm, the ZnO:N films were found to be p-type,which got high electric properties and quality crystalline.