Based On Optical Pulse-assisted Metal Induced Lateral Crystallization Polysilicon Thin Film

The development of display technology and the fabrication method and application of Poly-silicon film are reviewed. The research progress of metal induced lateral crystallization (MILC) of amorphous silicon, the induced mechanism and the application of Ni-induced lateral crystallization of amorphous silicon are summarized in detail in this thesis.Poly-crystallization silicon thin film transistor (p-Si TFT) addressing liquid crystal display has been currently the research and development focus in the field of flat panel displays, as it is most feasible approach to high resolution, high integration and low power consumption as a result of its high aperture ration. There are less number interface of the crystal grain, lower metal impurity and higher mobility in the electric current director, the MILC p-Si TFT has been the research focus in the fields of AMLCD, projection display, OLED etc. In this thesis, the p-Si films have been made in the method of MILC assisted by RTA at low temperature, the TFT's frame and facture technics has been designed.In this work, SiNx/a-Si:H/SiNx tri-layer thin films were deposited on the glass by Plasma Enhanced Chemical Vapor Deposition (PECVD). Ni metal was deposited by thermal evaporation deposition on the a-Si window formed by etching the topside SiNx, and then in the specially designed anneal stove anneal the a-Si film by the method of both MILC and RTA. The formation and the composition of crystalline silicon and the mechanism of Ni-induced lateral crystallization of hydrogenated amorphous silicon (a-Si:H) at low temperature were studied through the techniques of SEM, TEM and WDS etc. The electric characteristic of the film has been studied.The temperature fell to 400 ℃, anneal time reduced to 2 hours in the method of MILC assisted by RTA. The horizontal growth speed reaches 40um/hour when the environment temperature is 490℃, the on/off time of the light pulse is 12s/1.8min. The effects of some parameters were studied such as annealing temperature, the film thickness, the XRT light pulse width etc. Ni MILC mechanism was also studied. The study to the sample by high-resolution transmission electric mirror indicated that the crystalline grain is in the vertical direction of the Ni boundary. The mobility...