Annealing Effects Of Amorphous Silicon Thin Film By YAG Laser

Neo-environment-friendly recyclable energy is a new focus in the new energy research area. Solar energy plays an important role in the multiple types of new energy. Solar cells, as one of the means that applies solar energy, is quickly renewed in research and in practice.As high cost makes it difficult for crystal silicon and poly-silicon solar cells to be universally used in life, low cost amorphous silicon thin film solar cells are now a new issue in research. And as the cost of substrate material accounts for a great part in the total cost, development of low-cost substrate has become necessary. Meanwhile, annealing of amorphous silicon thin film on different substrates, which is a burgeoning research field, is also an important process.This paper deals with the crystallization of amorphous silicon thin film under different pulse frequencies. With high doped poly-silicon as substrate, it deposits amorphous silicon thin film with PECVD and anneals it with YAG laser. The result indicates that laser pulse annealing may quickly crystallize amorphous silicon thin film into micro-crystalline grains and the frequency of the pulse affects greatly crystallinity. Meanwhile, the electricity parameter test manifests that the impurity does not diffuse on the film. Research done in this paper has a positive significance in the application of high doped poly-silicon substrate in the manufacturing of low-cost solar cells.