Pulsed Laser Deposition Of Carbon Nitride Films And Its Growth Mechanism

Carbon ndride thin filIns wee deposited on Si wafes by 308rim XeCl laserablation of graphite target assisted by the dc.glow discharge plasma in theatmosphere of N2 or N2+H2. SeveraI measuremental techniques, including Scanningelectronic microscopy(SEM), X--lay diffiaction(XRD), X--ray photoeleCtlxinspectroscopy(XPS) and Auger electron spectroscopy(AES), were used to analyZe thecharacteristic of the films. The effects of the substrate tCmpethee, gas pressure,discharge culrel1t and laser paxa-meters on the growth of the carbon nitride thin filmswere studied.The propelties of the carbon nitride films are strongly affected by the plasmadynamics at the differCflt gas presstue. The CN films deposited at lowpressure(l0'- l0'pa) and room temperature were amphous, and annealing at l l00 tmade the films crystallization. At the high pl-essure(l0'-l0#pa), we obtained theCN/SW films at the substrate ten1Perature of 800-830C and SiCN fi1ms at950-- 1000 C.