Ecr Plasma Assisted Pulsed Laser Deposition Of Thin Film Applications

This thesis mainly discusses the preparation of several film stuffs using ECR-PLD ( electron cyclotron resonance plasma assisted pulsed laser deposition) method based on PLA (pulsed laser ablation) and MD (microwave discharge) technique. We have selected several stuffs such as DLC, CNx, ZnO, SiOx films in order to illuminate the characteristic of films preparation method and the influence of preparation condition through analysis token of these samples.The preparation method of DLC film is that Ar plasma is formed through ECR and ablate graphite target with pulsed laser. We deposit the film using ECR-PLD method . And then, it could be shown from token analysis of sample and comparison with no Ar plasma assisted, Assistant with ECR has changed the film structure in a certain extent and we observe the impact of the substrate bias to film structure. A CNx film is generated, which ablate graphite target with PLD and assisted with ECR nitrogen plasma. Except those, we also deposit the Ni-Co catalyze film. It can be indicated that ECR microwave discharge make nitrogen active infinitely, the assistant of ECR plasma makes the active nitrogen inter the film effectively and become a component of the film, Ni-Co catalyze have some influence to the structure of the film.A ZnO film with well transmittance in visible wave band is generated at the underlay of Al₂O₃, which ablate ZnO target in the atmosphere of pure oxygen at low pressure and deposition preparation using PLD method. It is discovered that the transmission ratio of film can be improved with the ECR nitrogen plasma bombardment pretreatment towards underlay before film deposition. And it also indicates that anneal disposal can decrease surface gurgitation from the heat anneal disposal towards ZnO film.The SiOx film is made by the method that ablate silicon target with pulsed laser in the oxygen plasma. The original intention of the work is try to prepare Si nanocrystals in SiO₂ film based on the preparation of SiOx film. And form Si nanocrastals embedded in SiOx film. Firstly, we prepare the SiOx film, and then, annealing at high temperature to form the Si nanocrystals. It can be also a reference for future that the anneal of SiOx film at all kinds of temperature, the observation to the PL spectrum and discussion of the origination and the change of PL, despite we can't ensure the form of Si nanocrystals currently. The ECR-PLD method combines characteristic of ECR microwave discharge and PLD, ECR microwave discharge can provide environment with energy and charge as the current most valid low pressure gas discharge technique. Furthermore, it could activate non-inert gas effectively and offer a great deal of active gas composition. They are easy to react with laser ablating production and form compound film forerunner. Laser, which the choice of target materials have no any restriction, could ablate almost any kinds of solid and liquid state stuff. Ablating productions have relative high inner and kinetic energy, which still have bigger surface transfer ratio after reach underlay via super-voice velocity and become pit at the low temperature. The bombardment of low energy plasma towards substrate and film is beneficial to coacervation of gas precursor and growth of film layer. ECR-PLD includes strong non-balance process, which can break through some restriction of balance thermodynamics and make the things. It is hoped that this thesis is helpful to develop ECR-PLD method and penetrate into correlative process and mechanism.