Sige Heterojunction Thin Film Characteristics

With the rapid development of thin film preparation technology, films of various material have become a widespread trend. Now, the thin-film material in material field plays a more and more important role. The heterostructure of Si_1-XGe_x alloy thin film is an important semiconductor material following the Si and GaAs. In the application of microelectronic devices and circuits, Si_1-xGe_x can transcend is better than GaAs not only on the frequency and speed, but also on the production cost. Therefore Si/Ge has a great prospect in optoelectronics applications.Si and Ge played a very important role in microelectronics field, But due to indirect bandgap between Si and Ge,to some extent,the application of Si and Ge was limited in optics. Therefore it was meaningful to study film microstructure and further research the thin film deposition process conditions.At first, the method of RF magnetron sputtering was used in this paper. A series of film samples of Ge were prepared in different sputtering power conditions, which were characterized by the technology of SEM, Raman and PL。Secondly, after High temperature annealing, the microstructure of the prepared film samples was analysised by SEM, Raman and PL ,then an analysis of the microstructures of the samples was made contract sputtering state with processing state.Finally, it is found that film crystallization rate and the grain size will increase with the sputtering power, but with continuous increased sputtering power, the crystallization rate decreases, instead, grain size also will reduce the light thin film, first to enhance and then reduce photoluminescence peak; After high-temperature annealing crystals,the quality of film sample was improved, the photoluminescence peak strength enhanced obviously, and a blueshift happened at Luminescence peak.