Silicon-based Optical Interconnection Key Technique Research

This paper focus on the hot topic of silicon optoelectronic research: CMOS silicon-based optoelectronic in CMOS technology.Optoelectronic integrated circuit (OEIC) which is compatible with CMOS technology can not only eliminate the effect of crosstalk and power-consumption, but also make full use of the standard CMOS process.The most difficult point of OEIC design is the light source. Light-source must have the capability to provide high band-width and high optical gain. Firstly, author point out the optical-electronic reversibility principle. Based on that fundamental principle, a lot of methods, which are used to boost the bandwidth and sensitivity of detector, are also valuable to design silicon light source. In order to validate that, the phenomenon of electroluminescence for silicon PIN structure is investigated.In the aspect of silicon radiation theory, the theoretical modeling technique based dislocation-rich silicon emitting devices are presented. We considered a rate-equation model for bound excitons, free excitons and free carriers which successfully describes the electrical and optical behavior of the diodes, developed a new way to calculate the model parameters by comparison with experimental results. This parameter extraction way can be fully accomplished automatically by computer.Author also does a lot of research in monolithically optoelectronic integrated circuit.1 Several new construction of silicon light source has been developed2 New high efficient detector construction has been designed. The low optical gain of CMOS light source and high optical loss of waveguide make the design very difficult. Author adopt new method to break the limit of bandwidth-gain constant rule. Considering a lot of new means to lower the noise effect, the design has very low input equivalent noise. At last monolithical optoelectronic circuit was realized.