The Research And Test Of Novel Ultraviolet Intensity Detector Based On TiO₂

The ultraviolet(UV) detectors have been of great concern because of their wide range of applications in many fields relating to daily life,and they themselves have very extensive marketspace and developing prospects.In recent years, the technology of the UV detectors based on wide bandgap semiconductors is improved considerablely due to their own advantages,becoming a new area in the research of the UV detectors.At present,the wide bandgap semiconductors such as GaN,ZnO,SiC is relatively popular in this area.We make the UV detector using the thin films made of TiO2 in this thesis.This kind of film is also wide bandgap semiconductor , and it has many advantages involving low cost and the relatively simple process. We produce the TiO2 thin film with a method named sol-gel, then the metal-semiconductor-metal(MSM) UV photo detector based on the TiO2 thin film is prepared through a certain process.After that we design a signal detecting circuit using the 8-bit microprocessor produced by theATMEL corporation , which gives a high performance and can accomplish the detection and display of the intensity of the ultraviolet. What is more , the designed UV photo detector gives an excellent performeance in the condition of high optical power .As a result , this system can be applied to some extreme conditions , which means it can be used in many occasions.In this paper we highlight the analysis and design of the signal detecting circuit , and the final system has many characteristics such as high accuracy, strong anti-interference ability . As to the aspect of software design , we reveal the block diagram of the main program and data collecting and processing , and the specific procedure is listed in the appendix.Finally , this project did a meaningful attempt and experiment for the development of the technology of the UV detection in our country , having great practical and guiding significance.