| Environment pollution and energy source shortage are becoming the mostimportant problems for the current society. Solar energy is a regenerative and cleanenergy.The researeh of solar cells becomes more and more important.The amorphoussilicon films solar cells have been concerned in the field of PV at present.Theapplication of low-cost substrates makes it more competitive in costcontrol.Amorphous silicon thin films have been widely studied in the recent years.Using SiH4 and H2 as gas sources,amorphous silicon thin films are deposited onglass,silicon wafer,stainless steel substrates by plasma enhanced chemical vapordeposition(PECVD). Using the method such as XRD,Raman,SEM,FTIR to studydifferent deposition parameters such as silane concentration,substrate temperature,RF power,gas pressure's influence to the thin film's deposition rate,structure,bondingmode and surface topography.It indicated that with the increase of silane concentration,substrate temperature,RF power and gas pressure,the deposition rate of amorphous silicon thin films on glassincreased.When silane concentration increased from 1% to 9%, the deposition rateincreased the most rapidly,the configurations shifted from SiH,SiH2 to SiH;whensubstrate temperature increased from 300℃to 350℃, the deposition rate increasedthe most rapidly,the configurations shifted from SiH,SiH2 to SiH;when RF powerincreased from 40W to 70W, the deposition rate increased the most rapidly,theconfigurations shifted from SiH to SiH,SiH2;when gas pressure increased from 80Pato 100Pa, the deposition rate increased the most rapidly,the configurations shiftedfrom SiH,SiH2 to SiH.Then the optimized depositon parameters of amorphous siliconthin films were obtained.Different substrate materials had a great influence to thesurface topography of thin films.The thin films deposited on glass and silicon wafer were more homogeneous and flatness,the surface of thin films on stainless steelsubstrates were rough. |
PDF Full Text Request