The Preparation And Performance Study Of Copper Phthalocyanine And Distyrylarylene Derivatives' Thin-Film Field-Effect Transistors

Organic field-effect transistors (OFET) using organic semiconductor materials as the active layer have a lot of merits and with great potential in applications in different area, due to their lower cost for large-area manufacturing and flexibility.In the first part of this thesis, we reviewed the development of organic field-effect transistors and the organic semiconductor materials which used for organic field-effect transistors. Then we expounded the exsited problems and the hot fields of OFET, and in the end of the first part we summarized our work in this thesis.In chapter 2, the classic organic semiconductor copper phthalocyanine (CuPc) was selected as the active layers of the transistors. The thin-film field-effect transistors are prepared by vacuum thermal evaporation. The thin-film devices were treated with different methods such as deposited at different substrate temperature, modified by different insulation substrate, doped with different metal phthalocyanine and tested at different test temperature. We found that the highest mobility was 0.037 cm2/(V·s), and the on/off was 1×103, when the substrate temperature was 80℃and the substrate was modified by ODTS.Organic semiconductor materials can be designed and modified appropriately to extend the application scope of OFET. In chapter 3, three linear organic semiconductor materials based on distyrylarylene:4,4-(2-naphthyl) distyrylarylene (Compound 1), 4,4-bis(4-biphenyl) distyrylarylene (Compound 2) and 4,4-bis(1-pyrene) distyrylarylene (Compound 3) have been designed and synthesized. Theπ-conjugated structure of the three compounds is similar to those of polythiophen. They have good thermal stability, and can be easily purified by sublimation. The thin-film devices were prepared by vacuum thermal evaporation. The results showed that all the compounds are p-type semiconductors. The edvice performance using Compound 1 as active layer is better than that of device using Compound 2 as active layer, and which is much better than that of device using Compound 3 as active layer. Among the thin-film devices, the best one was prepared by Compound 1 when the substrates were modified by TDTS, and the highest mobility was 0.17 cm2/(V·s), on/off was 5.8×106. The highest mobility of devices using Compound 2 as active layer was 0.12 cm2/(V·s), on/off ratio was 1×106.