Study On Characteristics And Technology Of Strained SOI Material

sSOI (Strained Silicon On Insulator, strained silicon-on-insulator) technology combines with the advantage of strained silicon and SOI .it can improve the carrier mobility dramaticly. The current main technology of sSOI material is based on epitaxial strained silicon of SGOI (Silicon Gem On Insulator) virtual substrate. The mobility gain lost at high Eeff. Thus based on Smart-cut technology and mechanical bending process, uniaxial strain SOI material has the advantage of simple material structure, no SiGe virtual substrate, no degradation of mobility gain etc. It will soon become the hot spot of sSOI research.This paper in-depth study the theory of strain Si, It includes energy-band structure, carrier effective mass and mobility gain. It also studies the properties and fabrication processes as SIMOX, BESOI, Smart-Cut etc of SOI materials. According to the material properties of Si wafers, we independent design a special equipment for wafer-level Si uniaxial strain.On this basis, paper studies the technology and fabrication processes of wafer-level uniaxial strain SOI , including H+ implantation, cleaning and bonding, mechanical bending, Smart-Cut etc. Using the special equipment, we get wafer-level uniaxial strain SOI materials(4 inch) after mechanical bending bonding and smart cut.The experimental samples are measured by HRXRD (High-resolution X-ray diffraction) and AFM (Atomic Force Microscope). The test sesults show that: the 2θof top-silicon and substrate silicon are 69.2437°and 69.3185°. The average surface roughness is 9nm. The lattice constant of them are 0.5423nm and 0.5418nm. So this uniaxially strained silicon on insulator technology is feasible.