| The sSOI(insulating layer of strained silicon) which contains both the advantages of SOI and strained silicon technology is a very innonvtive and competitive new technology. It’s not only improved the carrier mobility significantly but also eliminate the deep submicron under various parasific effect. The sSOI has become the optimization process of manufacturing of high-speed and low power integrated circuit.In this paper, a kind of external mechanical force on the silicon ship is introduced through uniaxial strain preparation sSOI new method which based on the elastic-plastic material bending springback theory is put forward, it uses a finished SOI wafer to get wafer level uniaxial strain SOI by mechanical bending and annealing of two step process. The method lots of features, such as simple equipment and experiment, only one SOI, not easily broken, low cost, large strain, etc. According to this experiment, successfully made4inch type P [110] crystal uniaxial compressive strain SOI experimental samples through a self-made arc bending test. It characterisats the sSOI sample though the RAMAN, HRXRD, AFM, etc characterization techniques, top layer silicon Raman frequency shift for520.3cm-1, the corresponding variables are calculated for0.077%, lattice constants of C1=0.542314305nm, is higher than that of bulk silicon crystal lattice constants, surface roughness of9nm. The test results show that, it has feasibility that by the mechanical force in the SOI layer structure of the top silicon layer is introduced the method of stress. |
