GaSb Based Quantum Well Laser Materials

In this thesis, we analyzed theoretically the basic properties of GaSb based antimonides, including the crystal constants, Band gap energies ,index of refraction of InGaAsSb and AlGaAsSb materials. We analyzed the energy structure, lasing wavelengths of InGaAsSb/AlGaAsSb strained quantum well systems. Mechanical equilibrium model has been adopted in the calculation of critical thickness of the strained material system. Through these theoretical analyses, the laser structure and thickness have been optimized.Adopting MBE systems, we designed and grown InGaAsSb and AlGaAsSb epitaxial layers. Surface morphology, interface property, architectural characteristic and light emitting properties have been studied, showing that suitable growth temperature and suitable flow rate of V/III are the pre-requisite condition for high quality epitaxial growth. High quality single crystal InGaAsSb and AlGaAsSb materials have been obtained by optimizing the growth parameters using MBE.