The Research On Influence Of Defects On Characteristics Of SiC PIN Diode

4H-SiC has been an attractive semiconductor material to be widely applied in the area of microelectronic and photoelectron devices because it has many excellent properties. This thesis focuses on the influence of defects in the 4H-SiC materials on characteristic of SiC PIN diodes. The structure of PIN diode and its operational mechanism are also introduced.Based on introducing the defects, origins, character, and their characterizations, the origin of stacking faults, as well as influence mechanism of Shockley stacking faults on SiC PIN diode are studied.I-V characteristics of SiC PIN diode in forward baise have been simulated by the simulator ISE TCAD 10.0. Meanwhile, trap charges are added into the device to be equivalent to the influence of defects on characteristic of device in the simulation.The results show that trap charges make obvious changes of I-V characteristics. The methods of wet etching on the materials of 4H-SiC have been investigated and then the analysis for wet etching is presented by SEM in this thesis.Finally, some improvement metods for the wet etching according to its shortages are suggested, which include the heating system and the measuring temperature systems.