The Study And Realization Of Stress Introducing Method Of Nitride Silicon Strain Technology

The strained silicon technology is very useful for the devices, and it can increase carrier mobility through producing stress into conducting channel, enhance performance of devices. In nowadays device size has been reducing, the strained silicon technology based on CMOS process is being increasingly wide range of applications. As one type of strained silicon technology; Silicon nitride strain technology can introduce stress into conduct channel through the deposition of high stress nitride silicon films, improve the carrier mobility, and optimize the device performance. Compared to other strained silicon technology, silicon nitride strain technology is more simple in the process, has a lower cost, so it has a very good prospects for development.In this paper, the silicon nitride strain technology has been analyzed, mainly, the mechanism and implement of stress introducing has been studied. In this paper, the reason of stress generation of silicon nitride films has been studied; the method, which the strain is introduced into channel with, has been analyzed; the relationship between the growth conditions and the intrinsic stress in films has been discussed. Through the suitable set of process conditions, the silicon nitride film with the intrinsic 1GPa stress has been deposited successfully on Si wafer; and the analysis of the experimental results is consistent with the theoretical results.